Invention Grant
- Patent Title: Q-factor measurement
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Application No.: US16154665Application Date: 2018-10-08
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Publication No.: US10797535B2Publication Date: 2020-10-06
- Inventor: Nicholaus Smith , Stefan Maireanu , Haiwen Jiang , David Wilson
- Applicant: Integrated Device Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Integrated Device Technology, Inc.
- Current Assignee: Integrated Device Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Haynes and Boone, LLP
- Main IPC: H02J50/60
- IPC: H02J50/60 ; H02J50/70 ; H02M3/158 ; H02J50/12 ; H02M3/156

Abstract:
In accordance with some embodiments of the present invention, a method of determining a Q-factor in a transmit circuit with a resonant circuit includes setting a system voltage; performing a coarse scan to determine a course resonant frequency; performing a fine scan based on the course scan to determine a resonant frequency; performing a final measurement at the resonant frequency to determine an average system voltage and an average peak voltage of the resonant circuit; calculating a Q parameter from the average system voltage and the average peak voltage; and calculating the Q-factor from the Q parameter.
Public/Granted literature
- US20190109499A1 Q-FACTOR MEASUREMENT Public/Granted day:2019-04-11
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