- 专利标题: Microwave plasma source, microwave plasma processing apparatus and plasma processing method
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申请号: US15883670申请日: 2018-01-30
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公开(公告)号: US10804077B2公开(公告)日: 2020-10-13
- 发明人: Toshihiko Iwao
- 申请人: TOKYO ELECTRON LIMITED
- 申请人地址: JP Tokyo
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4084ea30
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H01J37/244 ; H01L21/67 ; H01L21/66 ; C23C16/455 ; C23C16/52 ; C23C16/511 ; H01L21/02 ; H01L21/687
摘要:
A microwave plasma source for generating a microwave plasma inside a chamber by radiating a microwave into the chamber, includes: a microwave oscillator for oscillating the microwave and vary an oscillation frequency thereof; a waveguide through which the microwave propagates; an antenna part including a slot antenna for radiating the microwave into the chamber and having a predetermined pattern of slots, and a microwave-transmitting plate constituting a ceiling plate of the chamber and made of a dielectric material through which the microwave radiated from the slots transmits; temperature detectors for detecting temperatures at plural positions of the antenna part outside the chamber when the microwave plasma is generated; and a frequency controller for receiving detection signals obtained by the temperature detectors and controlling the oscillation frequency of the microwave oscillator so that a plasma density distribution inside the chamber becomes a desired distribution based on the detection signals.
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