- 专利标题： Semiconductor device and method of manufacturing the same
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申请号： US16507529申请日： 2019-07-10
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公开(公告)号： US10804160B2公开(公告)日： 2020-10-13
- 发明人: Kyung Yub Jeon , Soo Yeon Jeong , Jae Kwang Choi
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si, Gyeonggi-Do
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8234
摘要：
A method for manufacturing a semiconductor device is provided. A first vertical structure and a second vertical structure are formed on a substrate. The second vertical structure is positioned right next to the first vertical structure. The second vertical structure is positioned right next to the first vertical structure. An insulating layer is formed on the substrate between the first and second vertical structures. A gate metal and a gate dielectric layer, are formed on the first and second vertical structures. A portion of the gate metal, gate dielectric layer, and insulating layer is removed. A portion of the substrate is removed. The portion of the substrate is removed after the gate metal is formed on the first and second vertical structure.
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