Invention Grant
- Patent Title: Selective surface modification of OTFT source/drain electrode by ink jetting F4TCNQ
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Application No.: US16659784Application Date: 2019-10-22
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Publication No.: US10818842B2Publication Date: 2020-10-27
- Inventor: Ping Mei , Robert A. Street , Gregory L. Whiting , Sivkheng Kor , Steven E. Ready
- Applicant: Palo Alto Research Center Incorporated
- Applicant Address: US CA Palo Alto
- Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee: PALO ALTO RESEARCH CENTER INCORPORATED
- Current Assignee Address: US CA Palo Alto
- Agency: Fay Sharpe LLP
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L27/28 ; H01L51/10
Abstract:
A method and system utilizes ink jetting or printing of surface work function modification material or solution to form modified p-type and/or n-type electrodes. The proposed method is suitable for making complementary OTFT circuits in roll-to-roll fabrication environment.
Public/Granted literature
- US20200052214A1 SELECTIVE SURFACE MODIFICATION OF OTFT SOURCE/DRAIN ELECTRODE BY INK JETTING F4TCNQ Public/Granted day:2020-02-13
Information query
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