- 专利标题： Quantum dot light emitting devices
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申请号： US16311186申请日： 2017-06-26
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公开(公告)号： US10818860B2公开(公告)日： 2020-10-27
- 发明人: Anatoliy N Sokolov , Brian Goodfellow , Robert David Grigg , Liam P Spencer , John W Kramer , David D Devore , Sukrit Mukhopadhyay , Peter Trefonas, III
- 申请人： DOW GLOBAL TECHNOLOGIES LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
- 申请人地址： US MA Marlborough US MI Midland
- 专利权人： Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人： Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人地址： US MA Marlborough US MI Midland
- 代理商 G. Creston Campbell
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@53334d90 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@239d4c0d com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@68078012 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@48676243
- 国际申请： PCT/US2017/039191 WO 20170626
- 国际公布： WO2018/005318 WO 20180104
- 主分类号： H01L51/50
- IPC分类号： H01L51/50 ; H01L51/00 ; H01L51/52 ; H01L51/56
摘要：
The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.
公开/授权文献
- US20190334106A1 QUANTUM DOT LIGHT EMITTING DEVICES 公开/授权日：2019-10-31
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