A semiconductor device structure is provided. The semiconductor device structure includes a gate stack formed over a semiconductor substrate, a source/drain contact structure laterally adjacent to the gate stack, and a gate spacer formed between the gate stack and the source/drain contact structure. The semiconductor device structure also includes a first insulating capping feature covering the upper surface of the gate stack, a second insulating capping feature covering the upper surface of the source/drain contact structure, and an insulating layer covering the upper surfaces of the first insulating capping feature and the second insulating capping feature. The second insulating capping feature includes a material that is different from the material of the first insulating capping feature. The semiconductor device structure also includes a via structure passing through the insulating layer and the first insulating capping feature and electrically connected to the gate stack.