Invention Grant
- Patent Title: Semiconductor devices and systems with channel openings or pillars extending through a tier stack, and methods of formation
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Application No.: US16157927Application Date: 2018-10-11
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Publication No.: US10825828B2Publication Date: 2020-11-03
- Inventor: John D. Hopkins , Nancy M. Lomeli , Justin B. Dorhout , Damir Fazil
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/792 ; H01L29/66 ; H01L27/11582 ; H01L27/11524 ; H01L27/11573 ; H01L27/11529 ; H01L27/1157 ; H01L27/11556

Abstract:
Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.
Public/Granted literature
Information query
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