Invention Grant
- Patent Title: Partial save of memory
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Application No.: US16113221Application Date: 2018-08-27
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Publication No.: US10831393B2Publication Date: 2020-11-10
- Inventor: Jeffery J. Leyda , Nathan A. Eckel
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F12/0804

Abstract:
A variety of applications can include systems and/or methods of partial save of memory in an apparatus such as a non-volatile dual in-line memory module. In various embodiments, a set of control registers of a non-volatile dual in-line memory module can be configured to contain an identification of a portion of dynamic random-access memory of the non-volatile dual in-line memory module from which to back up content to non-volatile memory of the non-volatile dual in-line memory module. Registers of the set of control registers may also be allotted to contain an amount of content to transfer from the dynamic random-access memory content to the non-volatile memory. Additional apparatus, systems, and methods are disclosed.
Public/Granted literature
- US20190243575A1 PARTIAL SAVE OF MEMORY Public/Granted day:2019-08-08
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