Invention Grant
- Patent Title: Metal resistors with a non-planar configuration
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Application No.: US16570575Application Date: 2019-09-13
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Publication No.: US10832839B1Publication Date: 2020-11-10
- Inventor: Scott Beasor , Haiting Wang , Sipeng Gu , Jiehui Shu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01C7/22
- IPC: H01C7/22 ; H01C1/012 ; H01C17/00 ; H01L23/522 ; H01L49/02

Abstract:
Device structures and fabrication methods for an on-chip resistor. A dielectric layer includes a trench with a bottom and a sidewall arranged to surround the bottom. A metal layer is disposed on the dielectric layer at the sidewall of the trench. The metal layer includes a surface that terminates the metal layer at the bottom of the trench to define a discontinuity that extends along a length of the trench.
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