- 专利标题: Capacitive tuning circuit using RF switches with PCM capacitors and PCM contact capacitors
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申请号: US16247225申请日: 2019-01-14
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公开(公告)号: US10833004B2公开(公告)日: 2020-11-10
- 发明人: Nabil El-Hinnawy , Gregory P. Slovin , Jefferson E. Rose , David J. Howard
- 申请人: Newport Fab, LLC
- 申请人地址: US CA Newport Beach
- 专利权人: Newport Fab, LLC dba Jazz Semiconductor
- 当前专利权人: Newport Fab, LLC dba Jazz Semiconductor
- 当前专利权人地址: US CA Newport Beach
- 代理机构: Farjami & Farjami LLP
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/66 ; H01L45/00
摘要:
A capacitive tuning circuit includes radio frequency (RF) switches connected to an RF line. Each RF switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. Alternatively, the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. At least one capacitor is formed in part by at least one of the lower metal portions, upper metal portions, or trench metal liner. The capacitive tuning circuit can be set to a desired capacitance value when a first group of the RF switches is in an OFF state and a second group of the RF switches is in an ON state.
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