Invention Grant
- Patent Title: Structure and method to improve overlay performance in semiconductor devices
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Application No.: US16654354Application Date: 2019-10-16
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Publication No.: US10833022B2Publication Date: 2020-11-10
- Inventor: Cung D. Tran , Huaxiang Li , Bradley Morgenfeld , Xintuo Dai , Sanggil Bae , Rui Chen , Md Motasim Bellah , Dongyue Yang , Minghao Tang , Christian J. Ayala , Ravi Prakash Srivastava , Kripa Nidhan Chauhan , Pavan Kumar Chinthamanipeta Sripadarao
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent Anthony J. Canale
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G03F7/16 ; G03F7/20 ; H01L23/544 ; H01L21/027 ; H01L23/528 ; H01L23/538

Abstract:
In an exemplary method, a first layer is formed on a substrate. First overlay marks are formed in a first zone of the first layer. A non-transparent layer is formed on top of the first layer. At least a portion of the non-transparent layer is removed from an area above the first zone of the first layer. This provides optical access to the first overlay marks. A second layer is formed on top of the non-transparent layer. Second overlay marks are formed in a second zone of the second layer. Position information is obtained from each of the first overlay marks and the second overlay marks.
Public/Granted literature
- US20200051923A1 STRUCTURE AND METHOD TO IMPROVE OVERLAY PERFORMANCE IN SEMICONDUCTOR DEVICES Public/Granted day:2020-02-13
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