A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 Å greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.