- 专利标题： Method and apparatus for simulating the generated charge profile of piezoelectric elements due to arbitrary shock loading
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申请号： US15659548申请日： 2017-07-25
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公开(公告)号： US10853549B2公开(公告)日： 2020-12-01
- 发明人: Ziyuan Feng
- 申请人： Ziyuan Feng
- 申请人地址： US NY Ronkonkoma
- 专利权人： OMNITEK PARTNERS LLC
- 当前专利权人： OMNITEK PARTNERS LLC
- 当前专利权人地址： US NY Ronkonkoma
- 主分类号： H01L41/04
- IPC分类号： H01L41/04 ; G06F30/367 ; H02N2/18 ; H01L41/113
摘要：
A piezoelectric open-circuit output voltage profile simulator including a capacitor; at least first, second and third switches; and a controller for controlling the first, second and third switches.
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