发明授权
- 专利标题： Isolation well doping with solid-state diffusion sources for finFET architectures
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申请号： US16853545申请日： 2020-04-20
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公开(公告)号： US10854607B2公开(公告)日： 2020-12-01
- 发明人: Chia-Hong Jan , Walid M Hafez , Jeng-Ya David Yeh , Hsu-Yu Chang , Neville L Dias , Chanaka D Munasinghe
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Green, Howard & Mughal LLP
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/82 ; H01L29/10 ; H01L21/8238 ; H01L29/66 ; H01L29/78 ; H01L21/225 ; H01L29/06 ; H01L29/08
摘要：
An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area.
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