Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16536921Application Date: 2019-08-09
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Publication No.: US10855196B2Publication Date: 2020-12-01
- Inventor: Eitaro Miyake , Hiroshi Matsuyama , Tatsuya Hirakawa , Kazuya Kodani
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2019-050530 20190318
- Main IPC: H02M7/00
- IPC: H02M7/00 ; H05K7/14 ; H01L23/00

Abstract:
A semiconductor device including a main board; a first board provided on the main board; first and second semiconductor elements provided on the first board; a first positive terminal provided on the first board; a first negative terminal provided on the first board; a first output terminal provided on the first board; a second board provided on the main board; third and fourth semiconductor elements provided on the second board; a second positive terminal provided on the second board; a second negative terminal provided on the second board; a second output terminal provided on the second board; a first terminal plate connecting the first positive terminal and the second positive terminal, a second terminal plate connecting the first negative terminal and the second negative terminal, and a third terminal plate connecting the first output terminal and the second output terminal.
Public/Granted literature
- US20200304035A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-09-24
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