Invention Grant
- Patent Title: Methods and apparatus for calculating substrate model parameters and controlling lithographic processing
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Application No.: US16665022Application Date: 2019-10-28
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Publication No.: US10859930B2Publication Date: 2020-12-08
- Inventor: Jasper Menger , Paul Cornelis Hubertus Aben , Everhardus Cornelis Mos
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Wintrhop Shaw Pittman LLP
- Priority: EP14197517 20141212
- Main IPC: G03F9/00
- IPC: G03F9/00

Abstract:
Offline metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.
Public/Granted literature
- US20200057395A1 METHODS AND APPARATUS FOR CALCULATING SUBSTRATE MODEL PARAMETERS AND CONTROLLING LITHOGRAPHIC PROCESSING Public/Granted day:2020-02-20
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