Invention Grant
- Patent Title: Method for processing substrates
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Application No.: US16262994Application Date: 2019-01-31
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Publication No.: US10886136B2Publication Date: 2021-01-05
- Inventor: Toru Hisamatsu , Masanobu Honda , Yoshihide Kihara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/027 ; H01L21/033 ; H01L21/3065 ; H01L21/67 ; H01L21/02
Abstract:
A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.
Public/Granted literature
- US20200251344A1 METHOD FOR PROCESSING SUBSTRATES Public/Granted day:2020-08-06
Information query
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