Invention Grant
- Patent Title: Semiconductor device for improving device characteristics
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Application No.: US16258815Application Date: 2019-01-28
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Publication No.: US10886167B2Publication Date: 2021-01-05
- Inventor: Jin-hwan Chun , Hui-jung Kim , Keun-nam Kim , Sung-hee Han , Yoo-sang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness. Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0088153 20180727
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/762 ; H01L21/764 ; H01L29/06 ; H01L27/108

Abstract:
A semiconductor device includes: a substrate having active regions defined by a device isolation region; a conductive line extending in a direction on the active regions; insulating liners on both sidewalls of a lower portion of the conductive line that contacts with the active regions; spacers that are apart from the insulating liners in a direction perpendicular to a surface of the substrate and sequentially formed on both sidewalls of an upper portion of the conductive line; a blocking layer arranged at a spacing between a spacer located in the middle of the spacers and the insulating liners and in a recess portion recessed from one end of the spacer located in the middle of the spacers toward the conductive line; and conductive patterns arranged on the active regions on both sides of the spacers.
Public/Granted literature
- US20200035541A1 SEMICONDUCTOR DEVICE FOR IMPROVING DEVICE CHARACTERISTICS Public/Granted day:2020-01-30
Information query
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