Invention Grant
- Patent Title: Methods for wordline separation in 3D-NAND devices
-
Application No.: US16848754Application Date: 2020-04-14
-
Publication No.: US10886172B2Publication Date: 2021-01-05
- Inventor: Yihong Chen , Ziqing Duan , Abhijit Basu Mallick , Kelvin Chan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/3213 ; H01L21/02 ; H01L27/11582 ; H01L27/11556 ; H01L21/285 ; H01L23/532 ; H01L21/311 ; H01L23/528
Abstract:
Methods of wordline separation in semiconductor devices (e.g., 3D-NAND) are described. A metal film is deposited in the wordlines and on the surface of a stack of spaced oxide layers. The metal film is removed by high temperature oxidation and etching of the oxide or low temperature atomic layer etching by oxidizing the surface and etching the oxide in a monolayer fashion. After removal of the metal overburden, the wordlines are filled with the metal film.
Public/Granted literature
- US20200243382A1 Methods for Wordline Separation in 3D-NAND Devices Public/Granted day:2020-07-30
Information query
IPC分类:
