- 专利标题： Multilayer dielectric for metal-insulator-metal capacitor (MIMCAP) capacitance and leakage improvement
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申请号： US15706047申请日： 2017-09-15
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公开(公告)号： US10886362B2公开(公告)日： 2021-01-05
- 发明人: Takashi Ando , Eduard A. Cartier , Hemanth Jagannathan , Paul C. Jamison
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Kurt Goudy
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L49/02 ; H01L21/02
摘要：
A tri-layer dielectric stack is provided for a metal-insulator-metal capacitor (MIMCAP). Also, a metal-insulator-metal capacitor (MIMCAP) is provided having three or more electrodes. The tri-layer dielectric stack includes a first layer formed from a first metal oxide electrical insulator. The tri-layer dielectric stack further includes a second layer, disposed over the first layer, formed from ZrO2. The tri-layer dielectric stack also includes a third layer, disposed over the second layer, formed from a second metal oxide electrical insulator.
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