- 专利标题: Semiconductor device
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申请号: US16000095申请日: 2018-06-05
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公开(公告)号: US10886862B2公开(公告)日: 2021-01-05
- 发明人: Nobutaka Okumura
- 申请人: JTEKT CORPORATION
- 申请人地址: JP Osaka
- 专利权人: JTEKT CORPORATION
- 当前专利权人: JTEKT CORPORATION
- 当前专利权人地址: JP Osaka
- 代理机构: Oliff PLC
- 优先权: JP2017-117719 20170615
- 主分类号: H01L29/40
- IPC分类号: H01L29/40 ; H02P6/10 ; H03K17/16 ; H02M7/00 ; H05K1/02 ; H01L23/48 ; H02M7/5387 ; B62D5/04
摘要:
A third upper MOS and a third motor relay are disposed on a front surface of a substrate. A third shunt resistor and a third lower MOS are disposed on a back surface of the substrate. The substrate has a via electrically connecting interconnects. Thus, a source electrode of the third upper MOS and a drain electrode of the third motor relay are electrically connected to a source electrode of the third lower MOS by the via.
公开/授权文献
- US20180367071A1 SEMICONDUCTOR DEVICE 公开/授权日:2018-12-20
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