- 专利标题: Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate
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申请号: US16319016申请日: 2017-07-04
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公开(公告)号: US10886890B2公开(公告)日: 2021-01-05
- 发明人: Shoji Akiyama , Masayuki Tanno , Shozo Shirai
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP2016-142219 20160720,JP2016-198110 20161006,JP2017-089665 20170428
- 国际申请: PCT/JP2017/024490 WO 20170704
- 国际公布: WO2018/016314 WO 20180125
- 主分类号: H03H9/02
- IPC分类号: H03H9/02 ; H03H3/08 ; H03H9/25
摘要:
Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength λ of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.
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