Invention Grant
- Patent Title: Pattern forming method, resist pattern, method for manufacturing electronic device, and electronic device
-
Application No.: US15358537Application Date: 2016-11-22
-
Publication No.: US10890847B2Publication Date: 2021-01-12
- Inventor: Toru Tsuchihashi , Wataru Nihashi , Hideaki Tsubaki
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2014-155946 20140731
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/32 ; G03F7/038 ; G03F7/039 ; C08F220/18 ; G03F7/004 ; G03F7/16 ; G03F7/40 ; C08F220/20 ; C08F220/34 ; C08F12/22 ; C08F12/24 ; C08F212/14 ; C08F220/30 ; C08F220/38

Abstract:
A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.
Public/Granted literature
Information query
IPC分类: