Invention Grant
- Patent Title: Methods of fabricating high voltage semiconductor devices having improved electric field suppression
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Application No.: US16221033Application Date: 2018-12-14
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Publication No.: US10892237B2Publication Date: 2021-01-12
- Inventor: Stephen Daley Arthur , Liangchun Yu , Nancy Cecelia Stoffel , David Richard Esler , Christopher James Kapusta
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Fitch, Even, Tabin & Flannery LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/60 ; H01L29/16 ; H01L29/66 ; H01L23/00 ; H01L29/10 ; H01L29/20 ; H01L29/778
Abstract:
Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in the patterned dielectric dry film are aligned with conductive pads of each of the plurality of semiconductor devices.
Information query
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