- 专利标题： Semiconductor memory device having an array chip bonded to a circuit chip by a bonding metal
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申请号： US16508577申请日： 2019-07-11
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公开(公告)号： US10892270B2公开(公告)日： 2021-01-12
- 发明人: Yoshiaki Fukuzumi , Hideaki Aochi
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Toshiba Memory Corporation
- 当前专利权人： Toshiba Memory Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2014-186684 20140912
- 主分类号： H01L27/11573
- IPC分类号： H01L27/11573 ; H01L27/11582 ; H01L25/18 ; H01L27/11568 ; H01L21/768 ; H01L21/18 ; H01L23/00
摘要：
According to one embodiment, the array chip includes a three-dimensionally disposed plurality of memory cells and a memory-side interconnection layer connected to the memory cells. The circuit chip includes a substrate, a control circuit provided on the substrate, and a circuit-side interconnection layer provided on the control circuit and connected to the control circuit. The circuit chip is stuck to the array chip with the circuit-side interconnection layer facing to the memory-side interconnection layer. The bonding metal is provided between the memory-side interconnection layer and the circuit-side interconnection layer. The bonding metal is bonded to the memory-side interconnection layer and the circuit-side interconnection layer.
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