Invention Grant
- Patent Title: Dynamic transistor gate overdrive for input/output (I/O) drivers and level shifters
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Application No.: US16653391Application Date: 2019-10-15
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Publication No.: US10892760B1Publication Date: 2021-01-12
- Inventor: Sumit Rao , Wilson Jianbo Chen , Chiew-Guan Tan
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K19/0185 ; H03K19/003

Abstract:
An apparatus for generating an output voltage signal based on an input voltage signal. The apparatus includes a first field effect transistor (FET) including a first gate configured to receive a first gate voltage based on the input voltage signal; a second (FET) including a second gate configured to receive a second gate voltage based on the input voltage signal, wherein the first and second FETs are coupled in series between a first voltage rail and a second voltage rail, and wherein the output voltage signal is produced at an output node between the first and second FETs; and a gate overdrive circuit configured to temporarily reduce the first gate voltage during a portion of a transition of the output voltage signal from a logic low level to a logic high level.
Information query
IPC分类: