- 专利标题: Film formation apparatus
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申请号: US16143927申请日: 2018-09-27
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公开(公告)号: US10896841B2公开(公告)日: 2021-01-19
- 发明人: Daisuke Ono
- 申请人: SHIBAURA MECHATRONICS CORPORATION
- 申请人地址: JP Yokohama
- 专利权人: SHIBAURA MECHATRONICS CORPORATION
- 当前专利权人: SHIBAURA MECHATRONICS CORPORATION
- 当前专利权人地址: JP Yokohama
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Jerald L. Meyer
- 优先权: JP2017-190935 20170929
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; H01L21/687 ; H01J37/32 ; C23C14/00 ; C23C14/56 ; C23C14/08 ; C23C14/50
摘要:
A film formation apparatus includes a film formation unit which includes a film formation room having an opening at one end, has a target formed of a film formation material in the film formation room, and deposits the film formation material of the target on a surface of a workpiece facing the opening by plasma produced by a sputter gas in the film formation room, and a carrier that carries the workpiece along a predetermined carrying path so that the workpiece repeatedly pass through a facing region which faces the opening of the film formation room and a non-facing region which does not face the opening of the film formation room. The carrier includes a low-pressure position where the workpiece is placed and which causes an interior of the film formation room to be lower than a plasma ignition lower limit pressure and to be equal to or higher than a plasma electric discharge maintaining lower limit pressure when passing through the facing region, and a high-pressure position where workpiece is not placed and which causes the interior of the film formation room to be equal to or higher than the plasma ignition lower limit pressure when passing through the facing region.
公开/授权文献
- US20190103300A1 FILM FORMATION APPARATUS 公开/授权日:2019-04-04
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