Invention Grant
- Patent Title: Three dimensional vertically structured MISFET/MESFET
-
Application No.: US14990561Application Date: 2016-01-07
-
Publication No.: US10903371B2Publication Date: 2021-01-26
- Inventor: Adam Conway , Sara Elizabeth Harrison , Rebecca J. Nikolic , Qinghui Shao , Lars Voss , Srabanti Chowdhury
- Applicant: Lawrence Livermore National Security, LLC , The Regents of the University of California
- Applicant Address: US CA Livermore; US CA Oakland
- Assignee: Lawrence Livermore National Security, LLC,The Regents of the University of California
- Current Assignee: Lawrence Livermore National Security, LLC,The Regents of the University of California
- Current Assignee Address: US CA Livermore; US CA Oakland
- Agency: Zilka-Kotab, P.C.
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L29/10 ; H01L29/20 ; H01L29/06 ; H01L29/16 ; H01L29/812 ; H01L29/778 ; H01L29/66 ; H01L29/04
Abstract:
According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.
Public/Granted literature
- US20170200833A1 THREE DIMENSIONAL VERTICALLY STRUCTURED MISFET/MESFET Public/Granted day:2017-07-13
Information query
IPC分类:
