Invention Grant
- Patent Title: Metal-oxide-polysilicon tunable resistor for flexible circuit design and method of fabricating same
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Application No.: US15770009Application Date: 2015-12-11
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Publication No.: US10903372B2Publication Date: 2021-01-26
- Inventor: Kinyip Phoa , Jui-Yen Lin , Nidhi Nidhi , Chia-Hong Jan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2015/065217 WO 20151211
- International Announcement: WO2017/099792 WO 20170615
- Main IPC: H01L29/8605
- IPC: H01L29/8605 ; H01L29/417 ; H01L29/423 ; H01L29/66
Abstract:
Metal-oxide-polysilicon tunable resistors and methods of fabricating metal-oxide-polysilicon tunable resistors are described. In an example, a tunable resistor includes a polysilicon resistor structure disposed above a substrate. A gate oxide layer is disposed on the polysilicon resistor structure. A metal gate layer is disposed on the gate oxide layer.
Information query
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