Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15752151Application Date: 2017-03-28
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Publication No.: US10920109B2Publication Date: 2021-02-16
- Inventor: Jung Hak Kim , Hee Jung Kim , Seung Hee Nam , Kwang Joo Lee , Se Ra Kim , Young Kook Kim
- Applicant: LG CHEM, LTD.
- Applicant Address: KR Seoul
- Assignee: LG CHEM, LTD.
- Current Assignee: LG CHEM, LTD.
- Current Assignee Address: KR Seoul
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: KR10-2016-0037214 20160328
- International Application: PCT/KR2017/003353 WO 20170328
- International Announcement: WO2017/171367 WO 20171005
- Main IPC: H01L23/14
- IPC: H01L23/14 ; C09J7/10 ; C09J7/30 ; C09J11/06 ; C09J11/04 ; C09J133/08 ; C09J133/10 ; C09J163/00 ; C09J163/04 ; H01L23/495 ; H01L23/00 ; C08G59/62
Abstract:
The present invention relates to a semiconductor device including: a first semiconductor element formed on an adherend; and an adhesive film for embedding the first semiconductor element, wherein the adhesive film satisfies a predetermined ratio between a melt viscosity and a weight loss ratio at a high temperature.
Public/Granted literature
- US20180237663A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-08-23
Information query
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