Invention Grant
- Patent Title: Voltage generator, semiconductor apparatus and semiconductor system using the voltage generator
-
Application No.: US16673289Application Date: 2019-11-04
-
Publication No.: US10921840B2Publication Date: 2021-02-16
- Inventor: Tae Jin Hwang
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0043622 20190415
- Main IPC: G05F3/26
- IPC: G05F3/26

Abstract:
A voltage generator includes a bias voltage generation circuit and a compensation circuit. The bias voltage generation circuit generates a first bias voltage based on a reference current and generates a second bias voltage based on the first bias voltage. The compensation circuit changes a voltage level of the first bias voltage based on the second bias voltage.
Public/Granted literature
- US20200326741A1 VOLTAGE GENERATOR, SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR SYSTEM USING THE VOLTAGE GENERATOR Public/Granted day:2020-10-15
Information query
IPC分类: