A method of testing an OTP memory is disclosed. An OTP program mechanism that uses heat accelerated electromigration can be fully tested. In one embodiment, an OTP cell's programmability can be tested if an initial OTP element resistance is less than a predetermined resistance, as such insures that sufficient heat can be generated to be programmable. A non-destructive program state, or fake reading 1, can be created by low-voltage programming a cell while reading the same cell at the same time. Accordingly, alternative 0s and 1s patterns can be generated to fully test every functional block of an OTP memory.