Invention Grant
- Patent Title: Light emitting diodes and associated methods of manufacturing
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Application No.: US15679958Application Date: 2017-08-17
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Publication No.: US10923627B2Publication Date: 2021-02-16
- Inventor: Scott D. Schellhammer , Scott E. Sills , Lifang Xu , Thomas Gehrke , Zaiyuan Ren , Anton J. De Villiers
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/24
- IPC: H01L33/24 ; H01L33/00 ; H01L33/16 ; H01L33/22 ; H01L33/32

Abstract:
Light emitting diodes and associated methods of manufacturing are disclosed herein. In one embodiment, a light emitting diode (LED) includes a substrate, a semiconductor material carried by the substrate, and an active region proximate to the semiconductor material. The semiconductor material has a first surface proximate to the substrate and a second surface opposite the first surface. The second surface of the semiconductor material is generally non-planar, and the active region generally conforms to the non-planar second surface of the semiconductor material.
Public/Granted literature
- US20170345972A1 LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING Public/Granted day:2017-11-30
Information query
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