Invention Grant
- Patent Title: Replacement metal gate formation of PMOS ultra-low voltage devices using a thermal implant
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Application No.: US16560224Application Date: 2019-09-04
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Publication No.: US10930508B2Publication Date: 2021-02-23
- Inventor: Qintao Zhang , Kyu-Ha Shim
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Materials, Inc.
- Current Assignee: APPLIED Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kacvinsky Daisak Bluni PLLC
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/66 ; H01L21/8234
Abstract:
Disclosed are methods of forming devices. One method may include providing a first set of fins and a second set of fins extending from a substrate, and providing a dummy oxide over the first set of fins and the second set of fins. The method may further include performing a thermal implant to the second set of fins, wherein the thermal implant is an angled ion implant impacting the dummy oxide. The method may further include removing the dummy oxide from the first set of fins and the second set of fins, and forming a first work function (WF) metal over the first set of fins and a second WF metal over the second set of fins.
Public/Granted literature
- US20200273707A1 REPLACEMENT METAL GATE FORMATION OF PMOS ULTRA-LOW VOLTAGE DEVICES USING A THERMAL IMPLANT Public/Granted day:2020-08-27
Information query
IPC分类:
