- 专利标题： Methods of improving adhesion of photoresist in a staircase structure and methods of forming a staircase structure
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申请号： US16531815申请日： 2019-08-05
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公开(公告)号： US10930659B2公开(公告)日： 2021-02-23
- 发明人: Rohit Kothari , Jason C. McFarland , Jason Reece , David A. Kewley , Adam L. Olson
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L21/3213 ; H01L21/311 ; H01L27/11582 ; G03F7/00
摘要：
Methods of improving adhesion between a photoresist and conductive or insulating structures. The method comprises forming a slot through at least a portion of alternating conductive structures and insulating structures on a substrate. Portions of the conductive structures or of the insulating structures are removed to form recesses in the conductive structures or in the insulating structures. A photoresist is formed over the alternating conductive structures and insulating structures and within the slot. Methods of improving adhesion between a photoresist and a spin-on dielectric material are also disclosed, as well as methods of forming a staircase structure.
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