Invention Grant
- Patent Title: Spin current magnetization rotational element, magnetoresistance effect element, and magnetic memory
-
Application No.: US16751318Application Date: 2020-01-24
-
Publication No.: US10937480B2Publication Date: 2021-03-02
- Inventor: Yohei Shiokawa , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JPJP2017-084537 20170421
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G01R33/09 ; H01L43/12 ; H01L43/10 ; H01L43/08 ; H01L43/02

Abstract:
A spin current magnetization rotational element including a first ferromagnetic metal layer in which a magnetization direction is variable, and a spin-orbit torque wiring that extends in a second direction intersecting a first direction that is a plane-orthogonal direction of the first ferromagnetic metal layer, and is joined to the first ferromagnetic metal layer. The first ferromagnetic metal layer has a lamination structure including a plurality of ferromagnetic constituent layers and a plurality of nonmagnetic constituent layers which are respectively interposed between the ferromagnetic constituent layers adjacent to each other. At least one ferromagnetic constituent layer among the plurality of ferromagnetic constituent layers has a film thickness different from a film thickness of the other ferromagnetic constituent layers, and/or at least one nonmagnetic constituent layer among the plurality of nonmagnetic constituent layers has a film thickness different from a film thickness of the other nonmagnetic constituent layers.
Public/Granted literature
- US20200160900A1 SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY Public/Granted day:2020-05-21
Information query