Invention Grant
- Patent Title: Memory device with various pass voltages
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Application No.: US16295932Application Date: 2019-03-07
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Publication No.: US10937655B2Publication Date: 2021-03-02
- Inventor: Hee Youl Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0001875 20170105
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C11/56 ; H01L21/28 ; G06F12/02 ; G06F13/42 ; G06F12/16 ; H01L29/51 ; G11C16/04 ; G11C16/10 ; G11C16/34 ; G06F11/07

Abstract:
Provided herein may be a memory device and a method of operating the same. The memory device may include a memory block including a plurality of pages, and peripheral circuits configured to sequentially program the pages. The memory device may include control logic configured to control the peripheral circuits such that a program voltage is applied to a word line coupled to a page selected from among the pages such that different pass voltages are applied to all or some word lines coupled to pages on which a program operation has been performed among unselected pages other than the selected page, and to word lines coupled to pages on which a program operation has not been performed among the unselected pages.
Public/Granted literature
- US20190206690A1 MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2019-07-04
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