Invention Grant
- Patent Title: Semiconductor structures
-
Application No.: US16534114Application Date: 2019-08-07
-
Publication No.: US10937872B1Publication Date: 2021-03-02
- Inventor: Li-Che Chen , Chien-Hsien Song , Chih-Wei Lin , Hung-Chih Tan
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/78 ; H01L29/66 ; H01L29/10
Abstract:
A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed on the substrate, a source disposed in the substrate and located on one side of the gate, a drain disposed in the substrate and located on another side of the gate, and a gate extending portion disposed on the substrate and located between the gate and the drain. The doping type of the gate is the opposite of that of the gate extending portion.
Public/Granted literature
- US20210043740A1 SEMICONDUCTOR STRUCTURES Public/Granted day:2021-02-11
Information query
IPC分类:
