Invention Grant
- Patent Title: Self-healing method for fractured SiC single crystal nanowires
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Application No.: US16340356Application Date: 2017-11-15
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Publication No.: US10942099B2Publication Date: 2021-03-09
- Inventor: Zhenyu Zhang , Junfeng Cui , Yuefeng Du , Dongming Guo
- Applicant: DALIAN UNIVERSITY OF TECHNOLOGY
- Applicant Address: CN Liaoning
- Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
- Current Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
- Current Assignee Address: CN Liaoning
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201711094034.1 20171109
- International Application: PCT/CN2017/111166 WO 20171115
- International Announcement: WO2019/090797 WO 20190516
- Main IPC: G01N3/08
- IPC: G01N3/08 ; C30B29/36 ; C30B29/62 ; G01N23/06

Abstract:
A self-healing method for fractured single crystal SiC nanowires. A hair in a Chinese brush pen of yellow weasel's hair moves and transfers nanowires, which are placed on an in-situ TEM mechanical microtest apparatus. An in-situ nanomechanical tension test is realized. The nanowires are loaded. Displacement is 0-200 nm. Fracture strength of the single crystal nanowires is 12-15 GPa. After the nanowires are fractured, unloading causes slight contact between the fractured end surfaces, electron beam is shut off, and self-healing of the nanowires is conducted in a vacuum chamber. Partial recrystallization is found at a fracture after self-healing through in-situ TEM representation. A fracture strength test is conducted again after self-healing. A fractured position after healing is the same as the position before healing. The fracture strength of the single crystal nanowires after self-healing is 1-2.5 GPa. The recovery ratio of the fracture strength is 10-20%.
Public/Granted literature
- US20200080921A1 SELF-HEALING METHOD FOR FRACTURED SIC SINGLE CRYSTAL NANOWIRES Public/Granted day:2020-03-12
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