Invention Grant
- Patent Title: Power MOS device having an integrated current sensor and manufacturing process thereof
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Application No.: US15965759Application Date: 2018-04-27
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Publication No.: US10943896B2Publication Date: 2021-03-09
- Inventor: Davide Giuseppe Patti
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed Intellectual Property Law Group LLP
- Priority: IT10201746614 20170428
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/10 ; H01L29/78 ; H01L29/417 ; H01L29/66
Abstract:
Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.
Public/Granted literature
- US20180315746A1 POWER MOS DEVICE HAVING AN INTEGRATED CURRENT SENSOR AND MANUFACTURING PROCESS THEREOF Public/Granted day:2018-11-01
Information query
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