Invention Grant
- Patent Title: Method for forming semiconductor integrated circuit structure
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Application No.: US16151337Application Date: 2018-10-03
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Publication No.: US10943910B2Publication Date: 2021-03-09
- Inventor: Yu-Ting Li , Jen-Chieh Lin , Wen-Chin Lin , Po-Cheng Huang , Fu-Shou Tsai
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu; CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu; CN Quanzhou
- Agent Winston Hsu
- Main IPC: H01L27/10
- IPC: H01L27/10 ; H01L27/108 ; H01L27/06 ; H01L21/8234

Abstract:
A semiconductor IC structure includes a substrate including at least a memory cell region and a peripheral region defined thereon, a plurality of memory cells formed in the memory cell region, at least an active device formed in the peripheral region, a plurality of contact plugs formed in the memory cell region, and at least a bit line formed in the memory cell region. The contact plugs are physically and electrically connected to the bit line. More important, bottom surfaces of the contact plugs are lower a surface of the substrate.
Public/Granted literature
- US20190043866A1 METHOD FOR FORMING SEMICONDUCTOR INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2019-02-07
Information query
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