- 专利标题: Method for fabricating semiconductor device
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申请号: US16403251申请日: 2019-05-03
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公开(公告)号: US10943912B2公开(公告)日: 2021-03-09
- 发明人: Yong Li
- 申请人: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址: CN Shanghai; CN Beijing
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址: CN Shanghai; CN Beijing
- 代理机构: Anova Law Group, PLLC
- 优先权: CN201611248887.1 20161229
- 主分类号: H01L27/11
- IPC分类号: H01L27/11 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L29/423
摘要:
A semiconductor device includes a base substrate including an NMOS region and a PMOS region. The PMOS region includes a first P-type region and a second P-type region. The semiconductor device also includes an interlayer dielectric layer, a gate structure formed through the interlayer dielectric layer and including an N-type region gate structure formed in the NMOS region, a first gate structure formed in the first P-type region and connected to the N-type region gate structure, and a second gate structure formed in the second P-type region and connected to the first gate structure. The direction from the N-type region gate structure to the second gate structure is an extending direction of the gate structure, and along a direction perpendicular to the extending direction of the gate structure, the width of the first gate structure is larger than the width of the second gate structure.
公开/授权文献
- US20190259766A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 公开/授权日:2019-08-22