- 专利标题： Manufacturing method of semiconductor device including conductive structure
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申请号： US16878542申请日： 2020-05-19
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公开(公告)号： US10957762B2公开(公告)日： 2021-03-23
- 发明人: Te-Chang Hsu , Che-Hsien Lin , Cheng-Yeh Huang , Chun-Jen Huang , Yu-Chih Su , Yao-Jhan Wang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： CN201811235109.8 20181023
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L29/78 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L29/06 ; H01L29/417 ; H01L29/66 ; H01L21/3213 ; H01L21/311
摘要：
A manufacturing method of a semiconductor device includes the following steps. A semiconductor substrate with gate structures formed thereon is provided. A source/drain region is formed in the semiconductor substrate and formed between the gate structures. A dielectric layer is formed on the source/drain region and located between the gate structures. An opening penetrating the dielectric layer on the source/drain region is formed. A lower portion of a first conductive structure is formed in the opening. A dielectric spacer is formed on the lower portion and on an inner wall of the opening. An upper portion of the first conductive structure is formed in the opening and on the lower portion. The dielectric spacer surrounds the upper portion of the first conductive structure. The first conductive structure is formed by two steps for forming the dielectric spacer surrounding the upper portion and improving the electrical performance of the semiconductor device.
公开/授权文献
- US20200279917A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2020-09-03
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