发明授权
- 专利标题: Memory cell
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申请号: US16911049申请日: 2020-06-24
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公开(公告)号: US10964389B2公开(公告)日: 2021-03-30
- 发明人: Hidehiro Fujiwara , Hung-Jen Liao , Hsien-Yu Pan , Chih-Yu Lin , Yen-Huei Chen , Chien-Chen Lin
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: G11C15/00
- IPC分类号: G11C15/00 ; G11C15/04 ; H01L27/02 ; G11C11/412
摘要:
A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.
公开/授权文献
- US20200321054A1 MEMORY CELL 公开/授权日:2020-10-08