- 专利标题: Manufacturing method of semiconductor device and semiconductor device
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申请号: US16594174申请日: 2019-10-07
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公开(公告)号: US10964553B2公开(公告)日: 2021-03-30
- 发明人: Tetsuichiro Kasahara
- 申请人: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- 申请人地址: JP Nagano
- 专利权人: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- 当前专利权人: SHINKO ELECTRIC INDUSTRIES CO., LTD.
- 当前专利权人地址: JP Nagano
- 代理机构: Rankin, Hill & Clark LLP
- 优先权: JPJP2018-192981 20181011
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L21/56 ; H01L25/18 ; H01L23/367 ; H01L23/31 ; H01L23/00 ; H01L23/498
摘要:
A manufacturing method of a semiconductor device includes mounting a semiconductor element on a first electrode disposed on a first surface of a substrate; preparing a metal plate including a main body part and a projection part; mounting the metal plate on the first surface side of the substrate, by joining the projection part to a second electrode that is disposed on the first surface of the substrate; sealing the semiconductor element and the projection part with a sealing resin; and forming an electrode terminal made of a base end part that is connected to the second electrode and has a side surface that is covered by the sealing resin, and a tip end part that is integrally formed with the base end part and that projects from a front surface of the sealing resin, by etching the main body part excluding a portion overlapping with the projection part.