- 专利标题： Selective ILD deposition for fully aligned via with airgap
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申请号： US16868475申请日： 2020-05-06
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公开(公告)号： US10964588B2公开(公告)日： 2021-03-30
- 发明人: Christopher J. Penny , Benjamin David Briggs , Huai Huang , Lawrence A. Clevenger , Michael Rizzolo , Hosadurga Shobha
- 申请人： Tessera, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Tessera, Inc.
- 当前专利权人： Tessera, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/528
摘要：
A method is presented forming a fully-aligned via (FAV) and airgaps within a semiconductor device. The method includes forming a plurality of copper (Cu) trenches within an insulating layer, forming a plurality of ILD regions over exposed portions of the insulating layer, selectively removing a first section of the ILD regions in an airgap region, and maintaining a second section of the ILD regions in a non-airgap region. The method further includes forming airgaps in the airgap region and forming a via in the non-airgap region contacting a Cu trench of the plurality of Cu trenches.
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