- 专利标题: Stacked integrated circuit structure and method of forming
-
申请号: US16568938申请日: 2019-09-12
-
公开(公告)号: US10964667B2公开(公告)日: 2021-03-30
- 发明人: Wei-Ming Chen , Hsien-Pin Hu , Shang-Yun Hou , Wen-Hsin Wei
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/538
- IPC分类号: H01L23/538 ; H01L25/065 ; H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L25/00
摘要:
A semiconductor device, and a method of forming the device, are provided. The semiconductor device includes a first die having a first plurality of contact pads and a second die having a second plurality of contact pads. A substrate is bonded to a first contact pad of the first plurality of contact pads and a first contact pad of the second plurality of contact pads in a face-to-face orientation with the first die and the second die. A first through via extends through the substrate. Molding material is interposed between the first die, the second die and the substrate, the molding material extending along sidewalls of the first die, the second die, and the substrate. A second through via is positioned over a second contact pad of the first plurality of contact pads, the second through via extending through the molding material.
公开/授权文献
信息查询
IPC分类: