- 专利标题： Semiconductor device and operating method thereof
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申请号： US16697664申请日： 2019-11-27
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公开(公告)号： US10964788B1公开(公告)日： 2021-03-30
- 发明人: Chih-Yen Chen , Chia-Ching Huang
- 申请人： Vanguard International Semiconductor Corporation
- 申请人地址： TW Hsinchu
- 专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人： Vanguard International Semiconductor Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L29/40
- IPC分类号： H01L29/40 ; H01L29/417 ; H01L29/08 ; H01L29/778 ; H01L21/3213 ; H01L29/66 ; H01L29/20 ; H01L29/205 ; H01L21/02 ; H01L23/552
摘要：
A semiconductor device includes a semiconductor layer, a gate electrode disposed on the semiconductor layer, a first dielectric layer disposed on the semiconductor layer and the gate electrode, a source field plate disposed on the semiconductor layer and the first dielectric layer, a second dielectric layer disposed on the source field plate, and a source electrode disposed on the second dielectric layer and electrically connected to the source field plate. The gate electrode has a first sidewall and a second sidewall respectively disposed on the first side and the second side. The source field plate extends from the first side to the second side. A portion of the source field plate is disposed to correspond to the second sidewall. The semiconductor device further includes a third dielectric layer disposed on the source electrode and a drain structure disposed on the second side.
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