- 专利标题: Method for manufacturing light-emitting element
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申请号: US16807853申请日: 2020-03-03
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公开(公告)号: US10964841B2公开(公告)日: 2021-03-30
- 发明人: Naoto Inoue
- 申请人: NICHIA CORPORATION
- 申请人地址: JP Anan
- 专利权人: NICHIA CORPORATION
- 当前专利权人: NICHIA CORPORATION
- 当前专利权人地址: JP Anan
- 代理机构: Foley & Lardner LLP
- 优先权: JP2019-043118 20190308
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L21/78 ; B23K26/53 ; B23K26/57
摘要:
A method for manufacturing a light-emitting element includes: providing a wafer comprising: a substrate having a first surface and a second surface, and a semiconductor structure provided at the first surface; irradiating a laser beam into an interior of the substrate from a second surface side of the substrate, which comprises: forming a plurality of first modified regions, a plurality of second modified regions, and a plurality of third modified regions in the interior of the substrate; and subsequently, separating the wafer into a plurality of light-emitting elements.
公开/授权文献
- US20200287074A1 METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT 公开/授权日:2020-09-10