Invention Grant
- Patent Title: Photoelectric detection structure, manufacturing method therefor, and photoelectric detector
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Application No.: US16329405Application Date: 2018-06-08
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Publication No.: US10971636B2Publication Date: 2021-04-06
- Inventor: Zhanjie Ma
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee: BOE TECHNOLOGY GROUP CO., LTD.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201710438883.8 20170612
- International Application: PCT/CN2018/090360 WO 20180608
- International Announcement: WO2018/228277 WO 20181220
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L31/18 ; H01L31/108 ; H01L31/0352 ; H01L31/20

Abstract:
A photoelectric detection structure, a manufacturing method therefor, and a photoelectric detector. The photoelectric detection structure includes: a base substrate; an electrode strip, which is located on the base substrate; a semiconductor layer, which is located at a side of the base substrate that faces the electrode strip; an insulating layer, which is located between the electrode strip and the semiconductor layer, the insulating layer including a thickness-increased portion, and the thickness-increased portion being located on at least one edge of the electrode strip.
Public/Granted literature
- US20190198688A1 PHOTOELECTRIC DETECTION STRUCTURE, MANUFACTURING METHOD THEREFOR, AND PHOTOELECTRIC DETECTOR Public/Granted day:2019-06-27
Information query
IPC分类: